10_μm_process

10 µm process

10 µm process

Semiconductor manufacturing process

The 10 μm process (10 micron smallest dimension) is the level of MOSFET semiconductor process technology that was commercially reached around 1971,[1][2] by leading semiconductor companies such as RCA and Intel.

Products featuring 10 μm manufacturing process

References

  1. [1]
    Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Retrieved 11 May 2012.
  2. [2]
    Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.
  3. [3]
    Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. p. 330. ISBN 9783540342588.
  4. [4]
    Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. pp. 362–363. ISBN 9783540342588. The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 μm, 2 memory cell size, a die size just under 10 mm2, and sold for around $21.
  5. [5]
    "History of the Intel Microprocessor - Listoid". Archived from the original on 27 April 2015. Retrieved 19 April 2015.
Preceded by
20 μm process		 MOSFET semiconductor device fabrication process Succeeded by
6 μm process


Stub icon

This nanotechnology-related article is a stub. You can help Wikipedia by expanding it.
Share this article:

This article uses material from the Wikipedia article 10_μm_process, and is written by contributors. Text is available under a CC BY-SA 4.0 International License; additional terms may apply. Images, videos and audio are available under their respective licenses.