1_µm_process

1 μm process

1 μm process

Semiconductor manufacturing process

The 1 μm process (1 micrometre process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]

Products featuring 1.0 μm manufacturing process

  • NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.[4]
  • NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
  • Intel 80386 CPU launched in 1985 was manufactured using this process.[1]
  • Intel uses this process on the CHMOS III-E technology.[6]
  • Intel uses this process on the CHMOS IV technology.[7]

References

  1. [1]
    Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 19 April 2015. Retrieved 11 May 2012.
  2. [2]
    Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.
  3. [3]
    Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
  4. [4]
    Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
  5. [5]
    "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  6. [6]
    Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
  7. [7]
    Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11
Preceded by
1.5 μm process		 MOSFET semiconductor device fabrication process Succeeded by
800 nm process


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