# | Name | Property modeled | Parameter | Units | Default value |
1 | IS | current | transport saturation current | A | 1×10−16 |
2 | BF | current | ideal max. forward beta | — | 100 |
3 | NF | current | forward-current emission coefficient | — | 1 |
4 | VAF | current | forward early voltage | V | ∞ |
5 | IKF | current | corner for forward-beta high-current roll-off | A | ∞ |
6 | ISE | current | B–E leakage saturation current | A | 0 |
7 | NE | current | B–E leakage emission coefficient | — | 1.5 |
8 | BR | current | ideal max. reverse beta | — | 1 |
9 | NR | current | reverse-current emission coefficient | — | 1 |
10 | VAR | current | reverse early voltage | V | ∞ |
11 | IKR | current | corner for reverse-beta high-current roll-off | A | ∞ |
12 | ISC | current | B–C leakage saturation current | A | 0 |
13 | NC | current | B–C leakage emission coefficient | — | 2 |
14 | RB | resistance | zero-bias base resistance | Ω | 0 |
15 | IRB | resistance | current where base resistance falls half-way to its minimum | A | ∞ |
16 | RBM | resistance | minimum base resistance at high currents | Ω | RB |
17 | RE | resistance | emitter resistance | Ω | 0 |
18 | RC | resistance | collector resistance | Ω | 0 |
19 | CJE | capacitance | B–E zero-bias depletion capacitance | F | 0 |
20 | VJE | capacitance | B–E built-in potential | V | 0.75 |
21 | MJE | capacitance | B–E junction exponential factor | — | 0.33 |
22 | TF | capacitance | ideal forward transit time | s | 0 |
23 | XTF | capacitance | coefficient for bias dependence of TF | — | 0 |
24 | VTF | capacitance | voltage describing VBC dependence of TF | V | ∞ |
25 | ITF | capacitance | high-current parameter for effect on TF | A | 0 |
26 | PTF | | excess phase at frequency = 1/(2π TF) | ° | 0 |
27 | CJC | capacitance | B–C zero-bias depletion capacitance | F | 0 |
28 | VJC | capacitance | B–C built-in potential | V | 0.75 |
29 | MJC | capacitance | B–C junction exponential factor | — | 0.33 |
30 | XCJC | capacitance | fraction of B–C depletion capacitance connected to internal base node | — | 1 |
31 | TR | capacitance | ideal reverse transit time | s | 0 |
32 | CJS | capacitance | zero-bias collector–substrate capacitance | F | 0 |
33 | VJS | capacitance | substrate–junction built-in potential | V | 0.75 |
34 | MJS | capacitance | substrate–junction exponential factor | — | 0 |
35 | XTB | | forward- and reverse-beta temperature exponent | — | 0 |
36 | EG | | energy gap for temperature effect of IS | eV | 1.1 |
37 | XTI | | temperature exponent for effect of IS | — | 3 |
38 | KF | | flicker-noise coefficient | — | 0 |
39 | AF | | flicker-noise exponent | — | 1 |
40 | FC | | coefficient for forward-bias depletion capacitance formula | — | 0.5 |
41 | TNOM | | parameter measurement temperature | °C | 27 |