FBH_GaN_High_electron_mobility_transistor.jpg

Summary

Description
English: GaN high electron mobility transistor
Date
Source Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Author FBH/P.Immerz
Permission
( Reusing this file )
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Common coin diameters for reference:

  • U.S. dollar (as of?):
    • 1¢: 19.05 mm, 0.75 in
    • 5¢: 21.21 mm, 0.84 in
    • 10¢: 17.91 mm, 0.71 in
    • 25¢: 24.26 mm, 0.94 in
    • 50¢: 30.61 mm, 1.22 in
    • $1: 26.5 mm, 1.02 in
  • Canadian dollar (as of?):
    • 1¢: 19.05 mm, 0.75 in
    • 5¢: 21.2 mm, 0.83 in
    • 10¢: 18.03 mm, 0.71 in
    • 25¢: 23.88 mm, 0.94 in
    • 50¢: 27.13 mm, 1.07 in
    • $1: 26.5 mm, 1.02 in
    • $2: 28 mm, 1.1 in
  • Pound sterling as of 2021:
    • 1p: 20.32 mm, 0.8 in
    • 2p: 25.91 mm, 1.02 in
    • 5p: 18 mm, 0.71 in
    • 10p: 24.5 mm, 0.96 in
    • 20p: 21.4 mm, 0.84 in
    • 50p: 27.3 mm, 1.07 in
    • £1: 23.03–23.43 mm, 0.91–0.92 in
    • £2: 28.4 mm, 1.12 in
  • Euro as of 2002:
    • 1c: 16.25 mm, 0.64 in
    • 2c: 18.75 mm, 0.74 in
    • 5c: 21.25 mm, 0.84 in
    • 10c: 19.75 mm, 0.78 in
    • 20c: 22.25 mm, 0.88 in
    • 50c: 24.25 mm, 0.95 in
    • €1: 23.25 mm, 0.92 in
    • €2: 25.75 mm, 1.01 in

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Captions

GaN High electron mobility transistor from the Ferdinand-Braun-Institut

Items portrayed in this file

depicts

inception

17 October 2011

exposure time

0.125 second

focal length

55 millimetre

MIME type

image/jpeg