Power_die.svg
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Summary
Description Power die.svg |
English:
Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The remaining terminal (respectively collector, collector and drain) is on the back.
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Date | Modified 2010-02-03 |
Source | Own work |
Author |
Cyril Buttay
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Licensing
I, the copyright holder of this work, hereby publish it under the following licenses:
Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License , Version 1.2 or any later version published by the Free Software Foundation ; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License . http://www.gnu.org/copyleft/fdl.html GFDL GNU Free Documentation License true true |
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This file is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported license. | |
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This licensing tag was added to this file as part of the GFDL licensing update . http://creativecommons.org/licenses/by-sa/3.0/ CC BY-SA 3.0 Creative Commons Attribution-Share Alike 3.0 true true |
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